Studi Penumbuhan Grafena pada Temperatur Rendah Menggunakan Metode Hotwire-Plasma Enhanced Chemical Vapor Deposition

Jasruddin Jasruddin; Andi Momang Yusuf; Sulistiawaty Sulistiawaty

doi:10.20527/flux.v21i3.19279

Studi Penumbuhan Grafena pada Temperatur Rendah Menggunakan Metode Hotwire-Plasma Enhanced Chemical Vapor Deposition

Jasruddin Jasruddin, Andi Momang Yusuf, Sulistiawaty Sulistiawaty

Abstract

Dalam penelitian ini, telah dilakukan penumbuhan grafena dengan menggunakan metode Hotwire-Plasma Enhanced Chemical Vapor Deposition (HW-PECVD). Metode ini merupakan metode kombinasi antara metode PECVD konvensional dan metode CVD termal dengan menambahkan elemen hot-wire. Plasma dibangkitkan dengan menggunakan frekuensi radio pada spektrum Very High Frequency (VHF) sebesar 70 MHz. Sampel grafena ditumbuhkan di atas substrat kaca SiO₂ yang telah dilapisi lapisan katalis nikel dengan temperatur penumbuhan 300°C. Grafena yang dihasilkan dianalisis dengan menggunakan spektroskopi Raman. Spektrum Raman sampel menunjukkan bahwa sampel yang dihasilkan telah mengandung struktur grafitik yang ditunjukkan oleh keberadaan pita G yang tajam, disertai dengan pita D yang menunjukkan bahwa sampel tersebut juga mengandung sejumlah cacat pada struktur grafitiknya. Sementara itu, pita 2D yang tampak dalam spektra Raman masih relatif lemah yang memberi indikasi kualitas sampel yang buruk, mengandung banyak cacat, dan berukuran nanokristalin. Walaupun demikian, hasil ini menunjukkan adanya potensi besar untuk dapat menumbuhkan grafena pada temperatur rendah melalui metode HW-PECVD yang digunakan melalui optimasi parameter-parameter penumbuhan lebih lanjut seperti tekanan penumbuhan dan laju alir gas sumber termasuk mengoptimasi ketebalan lapisan katalis nikelnya.

Keywords

GRAFENA; GRAFITIK; HW-PECVD; SPEKTRA RAMAN

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DOI: http://dx.doi.org/10.20527/flux.v21i3.19279